If the temperature of an extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then
Answer: D
As the intrinsic carrier concentration is doubled, the concentration of both electrons and holes is doubled.
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Assertion (A): For elemental dielectrics, P = NaeEi where N is number of atoms/m3, P is polarization, ae is electronic polarization and Ei is internal electric field.
Reason (R): In elemental dielectrics there are no permanent dipoles or ions.
Answer: A
In elemental dielectrics Pi = Po = 0.
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Semi conducting materials are all
Answer: C
Many compounds also show semiconducting properties.
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If n denotes principal quantum number, the angular quantum number l = 0, 1... (n - 1).
Answer: A
Angular quantum number determines the angular momentum of electron.
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Assertion (A): Power loss in a conductor of resistance P = I2R.
Reason (R): When a conductor is carrying current with current density J as a result of applied field E, then heat developed/m3/ second = JE.
Answer: A
Heat developed depends an power loss.
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Hydrogen is used in
Answer: C
Modem large size generators have hydrogen cooling.
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The relaxation time of electrons in a metal is of the order of
Answer: C
No answer description available for this question.
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In metals, the average drift velocity of electron per unit field is called mobility.
Answer: A
No answer description available for this question
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Assertion (A): Electronic and Ionic polarization in a polyatomic gas are independent of temperature.
Reason (R): The orientation polarization is independent of temperature.
Answer: C
Orientation polarization is inversely proportional to temperature.
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In a true valence crystal, the bonding between the atoms is accomplished by the sharing of valence electrons.
Answer: A
Sharing of valence electons is a characteristic of true valence crystal.
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